A NEW METHOD FOR HORIZONTAL GROWTH OF SILICON CRYSTALLINE IN FABRICATION OF THIN FILM TRANSISTORS ON GLASS

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AKHAVAN FOOMANI A.; REZAEE L.; MOHAJERZADEH S.SH.A.D.; ASL SOLEYMANI E.

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Journal: Daneshvar Medicine: Basic and Clinical Research Journal Year:2002 | Volume:9 | Issue:37 Page(s): 25-32

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Title

A NEW METHOD FOR HORIZONTAL GROWTH OF SILICON CRYSTALLINE IN FABRICATION OF THIN FILM TRANSISTORS ON GLASS

Author(s)

AKHAVAN FOOMANI A. | REZAEE L. | MOHAJERZADEH S.SH.A.D. | ASL SOLEYMANI E.

Keywords

CLYSTALIZATIONQ4

SILICONQ4

THIN FILMQ4

TRANSISTORSQ3

ULTRAVIOLET RAYSQ4

HORIZANTAL GROWTHQ4

Abstract

A new method for crystallization of SILICON at low temperatures is reported which is suitable for realization of THIN FILM TRANSISTORS on glass substrates. In this technique the Crystallization initiates into the localized seeds of nickel-silicide and progresses towards the area under the gate of the TRANSISTORS. The lateral growth is enhanced in the presence of ultra-violet illumination during annealing and allowing growth at reduced temperatures. The Crystallinity of the samples has been verified by using scanning electron microscopy, transmission electron microscopy, X-ray diffraction and optical microscopy- Transistor fabrication has been achieved in ordinmy glass substrates at temperatures below 400°C. A hole mobility of 50cm2/Vs has been extracted from the electrical characteristics and further confirming the Crystallinity of the layer,

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APA: Copy

AKHAVAN FOOMANI, A., REZAEE, L., MOHAJERZADEH, S.SH.A.D., & ASL SOLEYMANI, E.. (2002). A NEW METHOD FOR HORIZONTAL GROWTH OF SILICON CRYSTALLINE IN FABRICATION OF THIN FILM TRANSISTORS ON GLASS. DANESHVAR MEDICINE, 9(37), 25-32. SID. https://sid.ir/paper/30621/en

Vancouver: Copy

AKHAVAN FOOMANI A., REZAEE L., MOHAJERZADEH S.SH.A.D., ASL SOLEYMANI E.. A NEW METHOD FOR HORIZONTAL GROWTH OF SILICON CRYSTALLINE IN FABRICATION OF THIN FILM TRANSISTORS ON GLASS. DANESHVAR MEDICINE[Internet]. 2002;9(37):25-32. Available from: https://sid.ir/paper/30621/en

IEEE: Copy

A. AKHAVAN FOOMANI, L. REZAEE, S.SH.A.D. MOHAJERZADEH, and E. ASL SOLEYMANI, “A NEW METHOD FOR HORIZONTAL GROWTH OF SILICON CRYSTALLINE IN FABRICATION OF THIN FILM TRANSISTORS ON GLASS,” DANESHVAR MEDICINE, vol. 9, no. 37, pp. 25–32, 2002, [Online]. Available: https://sid.ir/paper/30621/en

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