Design and Analysis of Injection Locked Semiconductor Ring Laser

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Mohammad Heydari Mohammad Heydari; Yavari mohammad Hasan; Heydari Mohammad

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Journal Paper

Paper Information

Journal: JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS Year:2022 | Volume:19 | Issue:2 Page(s): 73-80

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Information Journal Paper

Title

Design and Analysis of Injection Locked Semiconductor Ring Laser

Author(s)

Mohammad Heydari Mohammad Heydari | Yavari mohammad Hasan | Heydari Mohammad | Issue Writer Certificate

Keywords

Injection Locking

detuning frequency

Master laser

slave laser

semiconductor ring laser

locking region

Abstract

In this paper, based on the rate equations model for injection locked semiconductor ring laser, new equations are developed for modelling the detuning frequency and direct modulation response of the slave laser as well as the amplitude and phase modulation response of the Master laser. Results show that by increasing the injection power of the Master laser, the dynamic characteristics of the slave laser are improved consequently, locking area range, relaxation oscillation frequency and slave laser direct modulation bandwidth as well as field amplitude and phase of the Master laser are enhanced by comparing the result of different modulation schemes. It is observed that master phase modulation configuration provides the largest bandwidth while the output response is considered amplitude of the slave laser (80 times of the slave laser direct modulation frequency response).

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