Backgrond: Today world faces the crisis of aging population. Dementia can be considered as one of the most important diseases of elderly. Psychophysiological researches about dementia can attract our attention us to more objective findings. Changes in baseline skin Conductance in patients suffering from Schizophrenia were revealed in previous studies. Regarding common neurodegenerative base between Dementia and Schizophrenia, such skin Conductance changes may also be seen in patients with Dementia and there are few researches about this. The purpose of this study is to compare the level of electrical conductivity of the skin Conductance level (SCL) between elderlies with dementia and those without dementia.Materials and Methods: A case control study was conducted in the care center of elderlies, after examination and using CDR, 34 patients with dementia and 34 non-demented were selected and the later considered as the control group. The baseline skin Conductance of these two groups was measured by Skin Conductance measurement channel of biofeedback device and values of baseline skin Conductance were compared between groups using t test. Findings: Members of the groups had similar personal characteristics. Comparison of baseline skin Conductance showed 0.260±0.251 ms in patients with dementia and 0.600±0.425 ms in non-demented that there is significant (p<0.001).Conclusion: Baseline skin Conductance level in patients with dementia is significantly less than that in the control group. Investigation of SCL in different dementia subtype will help use a better understanding of brain function.

In this paper, we study the plasmonic thermal Conductance of ordered stacks of metallic nanorings in a host material. Using second quantized formalism of the Random Phase Approximation, we first determine the dispersion relations of surface plasmon waves on the stacks of nanorings. Then, using Landauer-Buttiker formalism, we determine the coefficient of plasmonic thermal Conductance and heat current through the stack as a function of temperature, radius, spacing of rings and dielectric constant of host material. Our results indicate that ordered stacks of metallic nanorings have potential plasmonic thermal properties for heat transfer in nanostructures.

Charge carriers in transition metal dichalcogenides have the charge, spin and valley degrees of freedom. In this paper, we investigate the electron transport properties through the 2 WSe junctions sandwiched between normal silicene sheets in the presence of Zeeman spin ( s M ), valley ( v M ) exchange fields and an electric potential U. We have evaluated the spin and valley polarization and conduction using the Landauer-buttiker scattering formula. Our findings show that the conductivity of normal monolayer silicene with intrinsic band gap in the presence of tungsten-diselneed barrier can be controlled by adjusting the Zeeman spin and valley fields. Spin and valley polarization is reported to be about 80%. Another result is that the valley switching can occur with adjusting the intensity of the spin and valley fields. We also show that increasing the length of the middle region, on account of the Klein tunneling phenomenon, cannot prevent passage of charge carriers and we have an oscillating current even for large length of the barrier region.

Polythiophene is a highly conductive molecule which possesses thermal and chemical stability showing great performance in electrical devices. Polythiophene also shows an uncommon highly demanding electrical property named negative differential resistance which is a decrease of electron current with increase of applied voltage. To address this issue, in this work we study theoretically electron transport properties of a polythiophene molecular bridge sandwiched between two metal leads in the presence of Nitrogen atom as a substitute for one or two of the Carbon atoms in the molecule. The results based on Green’ s function formalism show that the presence of Nitrogen reduces the electron transmission coefficient. On the other hand, Nitrogen can lead to amplification of negative differential resistance. Strength of the resistance is affected by the positions and number of Nitrogen atoms in the system. Therefore, choosing right positions for locating impurities is very important. We found that by substituting a Carbon atom with Nitrogen in some positions the system shows notable negative differential resistance. Besides, when two Carbon atoms are replaced by Nitrogen atoms there are some special locations that not only the system shows negative deferential resistance but also it works as an electronic molecular switch which is highly demanding in electronic industry.

In this study, we investigated the spin dependent electronic transport of a fishbone-like nanostructure including two magnetic atoms at its ends. The electronic Conductance of this nanostructure for three different orientations of atomic magnetic moments was numerically studied when the structure was sandwiched between two nonmagnetic leads. By using Green’s function technique at the tight-binding model, we calculated the spin dependent electronic transmission coefficient. The calculated results revealed that the Conductance depends on the incident electron energy as well as the magnitude and orientation of atomic magnetic moments in the nanostructure.

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The Conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have found the number of antiresonant exactly depends on the number of quantum dot in every array and increasing array make antiresonants wide increase.