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Title

INVESTIGATION OF THE EFFECT OF ANNEALING CONDITIONS ON THE BAND GAP OF THE INDIUM OXIDE THIN FILMS

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Abstract

 IN THIS STUDY, INDIUM THIN FILMS WERE DEPOSITED ON THE GLASS SUBSTRATES IN THE VACUUM (5×10-5 M BAR) USING THERMAL EVAPORATION METHOD. NEXT, THE SUBSTRATES WERE PUT IN THE CYLINDRICAL FURNACE FOR THERMAL ANNEALING. THE ANNEALING TIME AND TEMPERATURE WERE 30 MIN AND 250 OC RESPECTIVELY. THEN, THE X-RAY DIFFRACTION ANALYSIS WAS USED FOR STUDYING THE CRYSTAL STRUCTURE OF ANNEALED LAYERS. THE OPTICAL ABSORPTION WAS USED FOR DETERMINING THE BAND GAP. IT CAN BE UNDERSTOOD THAT THE ANNEALED LAYERS IN THE OPEN AIR WERE OXIDIZE AND THE BAND GAP OF LAYERS WAS REDUCED WHERE THE PRESSURE OF FURNACE CHAMBER IN THE ANNEALING PROCESSING WAS 2×10-2 MBAR.

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