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Title

EFFECT OF SI IMPURITIES ON THE DEFECT STRUCTURE IN GAN

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Abstract

 IN THIS EXPERIMENTAL WORK THE EFFECT OF SI IMPURITIES ON THE DEFECT STRUCTURE IN GAN WAS STUDIED. THE RESULTS OF OUR WORK ON THE TWO GAN SAMPLES WITH DIFFERENT SI IMPURITIES SHOW THAT SI IMPURITIES DECREASE THE DISLOCATION DENSITY AND CHANGE THE DISLOCATION DISTRIBUTION TO A MORE RANDOM CONDITION. SINCE DISLOCATIONS ACT AS TRAPS FOR CARRIERS IN THE SAMPLE, SI IMPURITIES WILL INCREASE THE CARRIER MOBILITY BY DECREASING THE DISLOCATION CONCENTRATION AND THEREFORE WOULD IMPROVE THE ELECTRICAL PROPERTIES OF GAN.

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