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Title

INVESTIGATION OF NI/CU ON N-TYPE POLY SILICON FOR USING FRONT-CONTACT IN SOLAR CELL

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Abstract

 IN THIS PAPER, WE HAVE INVESTIGATED THE CONTACT RESISTIVITY OF THE NI/CU AND TI/PD/AG STRUCTURES. THE RESULTS OF THESE ANALYZES AND MEASUREMENTS SHOW THAT FOR A SPECIFIC SILICON DOPING VALUE, THE NI/CU IS THE MOST SUITABLE AND COST EFFECTIVE STRUCTURE DUE TO ITS LOWER SCHOTTKY BARRIER HEIGHT (WHICH IS NOT MEASURABLE BY C-V METHOD), AND THEREFORE ITS BETTER OHMIC CONTACT. ACCORDING TO THE OBTAINED RESULTS, THE RESISTIVITY REACHES TO 4.8X10-6 AFTER ANNEALING AT 320OC FOR NI/CU STRUCTURE AND 8X10-6 AFTER ANNEALING AT 480OC FOR TI/PD/AG STRUCTURE.

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