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Information Journal Paper

Title

IMPURITY BINDING ENERGY IN SPHERICAL QUANTUM DOT IN THE PRESENCE OF AN ELECTRIC FIELD

Author(s)

 SADEGHI E.

Pages

  122-127

Abstract

 Introduction: Semiconductor nanostructures have attracted much attention due to its application in the development of optoelectronic devices. In these structures the electron spectrum comprises a set of discrete levels. On the other hand, donor impurity in quantum dots can alter the properties of a quantum devices.Aim: Study of the effect of external electric field on the impurity binding energy in a spherical quantum dot.Materials and Method: The energy levels are investigated using variational method within the effective mass approximation and finite barrier potential.Results: The energy of impurity and binding energy are calculated in terms of radius of quantum dot. The binding energy is reduced with increases the radius of dot. The ground state energy of electron, IMPURITY ENERGY, and NORMALIZED BINDING ENERGY versus electric field for different dot radii in finite quantum dot are also calculated.Conclusion: The results show the energies decrease with increases the strength of electric field.

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    APA: Copy

    SADEGHI, E.. (2010). IMPURITY BINDING ENERGY IN SPHERICAL QUANTUM DOT IN THE PRESENCE OF AN ELECTRIC FIELD. JOURNAL OF SCIENCES (ISLAMIC AZAD UNIVERSITY), 20(75 (PHYSICS ISSUE)), 122-127. SID. https://sid.ir/paper/70519/en

    Vancouver: Copy

    SADEGHI E.. IMPURITY BINDING ENERGY IN SPHERICAL QUANTUM DOT IN THE PRESENCE OF AN ELECTRIC FIELD. JOURNAL OF SCIENCES (ISLAMIC AZAD UNIVERSITY)[Internet]. 2010;20(75 (PHYSICS ISSUE)):122-127. Available from: https://sid.ir/paper/70519/en

    IEEE: Copy

    E. SADEGHI, “IMPURITY BINDING ENERGY IN SPHERICAL QUANTUM DOT IN THE PRESENCE OF AN ELECTRIC FIELD,” JOURNAL OF SCIENCES (ISLAMIC AZAD UNIVERSITY), vol. 20, no. 75 (PHYSICS ISSUE), pp. 122–127, 2010, [Online]. Available: https://sid.ir/paper/70519/en

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