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Information Journal Paper

Title

QUANTUM ANALYTICAL MODELING AND SIMULATION OF CNT ON INSULATOR (COI) AND CNT ON NOTHING (CON) FET: A COMPARATIVE ANALYSIS

Pages

  91-97

Abstract

 A comprehensive performance analysis by quantum analytical modeling of CNT on insulator (COI) and CNT on nothing (CON) FET having channel length 20 nm has been proposed and investigated on the basis of 2D Poisson’s Equation and solution of 1-D Schrodinger’s Equation and validated using ATLAS 2D SIMULATOR. As classical approximations fail to describe carrier quantization, charge inversion and potential profile of a device at sub-100 nm regime, here for the first time an analytical model in quantum mechanical aspect for COI/CON devices has been derived. Effects of high-k dielectrics in place of conventional SiO2 over the device characteristics have been thoroughly discussed. Moreover, all noticeable benefits of our device to the so called SOI/SON architecture have also been vividly justified.

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    APA: Copy

    MUKHERJEE, SUDIPTA, BANDYOPADHYAY, DIPAN, KISHORE DUTTA, PRANAB, & SARKAR, SUBIR KUMAR. (). . , (), -. SID. https://sid.ir/paper/318878/en

    Vancouver: Copy

    MUKHERJEE SUDIPTA, BANDYOPADHYAY DIPAN, KISHORE DUTTA PRANAB, SARKAR SUBIR KUMAR. . [Internet]. ;():-. Available from: https://sid.ir/paper/318878/en

    IEEE: Copy

    SUDIPTA MUKHERJEE, DIPAN BANDYOPADHYAY, PRANAB KISHORE DUTTA, and SUBIR KUMAR SARKAR, “,” , vol. , no. , pp. –, , [Online]. Available: https://sid.ir/paper/318878/en

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