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Title

THE IMPACT OF STRUCTURAL PARAMETERS ON THE PERFORMANCE OF NANOSCALE DG-SOI MOSFETS IN SUB THRESHOLD REGION

Pages

 Start Page 15 | End Page 19

Abstract

 This paper is intended to investigate the impact of structural parameters (in particular: body thickness (TBody), Source/Drain Length (LS /LD) and gate oxide thickness (TOX)) on the ELECTRICAL CHARACTERISTICS of nanoscale Double Gate SOI MOSFET (DG SOI MOSFET) in subthreshold regime. It will be shown that a reduction in Ls /Ld doesn’t have a profound effect on both on-current and Drain Induced Barrier Lowering Effect (DIBL); however it increases the effective Gate Capacitance (CGeff) significantly. A decrease in Tbody results in an increase in CGeff and a decrease in potential barrier height while ION is reduced.This investigation also proves that as TOX is increased, CGeff is decreased. A decline in TOX reduces ION while it drastically increases ION /IOFF ratio.

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