Paper Information

Title: 

ABSORBANCE MEASUREMENT OF FREE STANDING POROUS SILICON

Type: PAPER
Author(s): ZAFARI RAZIEH,SABET DARIANI REZA
 
 
 
Name of Seminar: NATIONAL VACUUM CONFERENCE IRAN
Type of Seminar:  CONFERENCE
Sponsor:  PAZHOHESHKADE OLOM VA SANAYE GHAZAEE
Date:  2012Volume 5
 
 
Abstract: 

POROUS SILICON ARE PREPARED FROM P-TYPE SI WAFER BY ELECTROCHEMICAL METHOD WITH ETCHING TIMES OF 10, 20, 30, 40 MIN. SEM TOP AND CROSS SECTION VIEWS ARE MEASURED AND SHOWED THAT WITH INCREASING ETCHING TIME, THICKNESS OF POROUS LAYER AND POROSITY INCREASES. ALSO, ABSORBANCE OF SAMPLES IS DECREASED WITH INCREASING ETCHING TIME.

 
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