Paper Information

Title: 

LOW TEMPERATURE GROWTH OF NANO-CRYSTALLINE SILICON AND GERMANIUM USING RF HYDROGEN PLASMA WITH APPLICATION IN THIN FILM TRANSISTORS

Type: PAPER
Author(s): HASHEMI POUYA,ABDI YASER,MOHAJERZADEH SHAMSODDIN,DERAKHSHANDEH JABER,HEKMATSHOAR BAHMAN,ARZI EZATOLLAH,ROBERTSON MICHAEL
 
 
 
Name of Seminar: IRAN PHYSICS CONFERENCE
Type of Seminar:  CONFERENCE
Sponsor:  PHYSICS SOCIETY OF IRAN
Date:  2005Volume -
 
 
Abstract: 

NANO-CRYSTALLINE SI AND GE LAYERS WERE GROWN AT LOW TEMPERATURES ON GLASS SUBSTRATES BY SUCCESSIVE RF-PECVD HYDROGENATION AND ANNEALING STEPS, WITH NO NEED TO ANY METAL INCORPORATION. THIS LEADS TO FORMATION OF GRANULAR SI AND GE STRUCTURES WITH AVERAGE GRAIN SIZE OF LESS THAN 100NM AT TEMPERATURES AS LOW AS 250OC AND 150OC, RESPECTIVELY. THE EFFECT OF HYDROGEN PLASMA POWER AT VARIOUS TEMPERATURES ON THE CRYSTALLINITY OF THE LAYERS HAS BEEN STUDIED BY SEM AND TEM ANALYZES. WITH CONTROL OVER ANNEALING TIME AND PLASMA POWER, DEVICE-QUALITY POLYCRYSTALLINE GE AND SI LAYERS HAVE BEEN GROWN, WHICH COULD BE EMPLOYED IN FABRICATION OF THIN-FILM TRANSISTORS FOR APPLICATIONS IN LOW COST LARGE-AREA ELECTRONICS.

 
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