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Paper Information

Title: 

EFFECT OF SI-DOPING POSITION ON OPTICAL PROPERTIES OF NITRIDE QUANTUM WELL

Type: PAPER
Author(s): HARATIZADEH H.,TABASI F.S.,HOLTZ P.O.
 
 
 
Name of Seminar: IRAN PHYSICS CONFERENCE
Type of Seminar:  CONFERENCE
Sponsor:  PHYSICS SOCIETY OF IRAN
Date:  2005Volume -
 
 
Abstract: 

THE EFFECTS OF SI DOPING ON THE EMISSION ENERGY IN A SET OF GAN/ALGAN MULTIPLE QUANTUM WELL (MQW) SAMPLES WITH DIFFERENT POSITION OF THE DOPANT LAYER WERE STUDIED BY MEANS OF PHOTOLUMINESCENCE (PL) MEASUREMENTS. WHEN THE DOPING IS IN THE BARRIER AND IN BOTH BARRIER AND WELL, THE MQW EMISSION APPEARS ABOVE THE GAN BAND GAP, WHILE THE SAMPLE DOPED IN THE WELL SHOWS A REDSHIFTED EMISSION. THE REDSHIFT IS ATTRIBUTED TO THE SELF-ENERGY SHIFT OF THE ELECTRON STATES DUE TO THE CORRELATED MOTION OF THE ELECTRONS EXPOSED TO THE FLUCTUATING POTENTIAL OF THE DONOR IONS.

 
Keyword(s): 
 
 
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