Paper Information

Title: 

LOW FIELD ELECTRON TRANSPOT IN INAS

Type: PAPER
Author(s): SADEGHI AMIR MASOUD,GHAZI MOHAMMAD E.,ARABSHAHI HADI
 
 
 
Name of Seminar: IRAN PHYSICS CONFERENCE
Type of Seminar:  CONFERENCE
Sponsor:  PHYSICS SOCIETY OF IRAN
Date:  2005Volume -
 
 
Abstract: 

IN THIS PAPER WE REPORT TEMPERATURE AND DOPING DEPENDENCE OF ELECTRON MOBILITY IN BOTH INAS AND GAAS COMPOUNDS WHICH HAVE BEEN CALCULATED USING AN ITERATIVE TECHNIQUE. THE FOLLOWING SCATTERING MECHANISMS, I.E, IMPURITY, POLAR OPTICAL PHONON, ACOUSTIC PHONON, PIEZOELECTRIC ARE INCLUDED IN THE CALCULATION. IT IS FOUND THAT THE ELECTRON MOBILITY DECREASES MONOTONICALLY AS THE TEMPERATURE INCREASES FROM 50K TO 500K.THE LOW TEMPERATURE VALUE OF ELECTRON MOBILITY DECREASES SIGNIFICANTLY WITH INCREASING THE DOPING CONCENTRATION. THE ITERATIVE RESULTS ARE IN FAIR AGREEMENT WITH OTHER RECENT CALCULATIONS OBTAINED USING THE RELAXATION-TIME APPROXIMATION AND EXPERIMENTAL METHOD.

 
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