Paper Information

Title: 

EFFECT OF SI IMPURITIES ON THE DEFECT STRUCTURE IN GAN

Type: PAPER
Author(s): MOKHTARI HOSSEIN,SEHHATI NAYEREH
 
 
 
Name of Seminar: IRAN PHYSICS CONFERENCE
Type of Seminar:  CONFERENCE
Sponsor:  PHYSICS SOCIETY OF IRAN
Date:  2005Volume -
 
 
Abstract: 

IN THIS EXPERIMENTAL WORK THE EFFECT OF SI IMPURITIES ON THE DEFECT STRUCTURE IN GAN WAS STUDIED. THE RESULTS OF OUR WORK ON THE TWO GAN SAMPLES WITH DIFFERENT SI IMPURITIES SHOW THAT SI IMPURITIES DECREASE THE DISLOCATION DENSITY AND CHANGE THE DISLOCATION DISTRIBUTION TO A MORE RANDOM CONDITION. SINCE DISLOCATIONS ACT AS TRAPS FOR CARRIERS IN THE SAMPLE, SI IMPURITIES WILL INCREASE THE CARRIER MOBILITY BY DECREASING THE DISLOCATION CONCENTRATION AND THEREFORE WOULD IMPROVE THE ELECTRICAL PROPERTIES OF GAN.

 
Keyword(s): 
 
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