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Paper Information

Title: 

INVESTIGATION OF NI/CU ON N-TYPE POLY SILICON FOR USING FRONT-CONTACT IN SOLAR CELL

Type: PAPER
Author(s): DEHGHAN NAYERI F.,ASL SOLEIMANI E.,MALEKI M.H.,JALALI R.,MANAVIZADEH N.,KETABDARI M.R.
 
 
 
Name of Seminar: IRAN PHYSICS CONFERENCE
Type of Seminar:  CONFERENCE
Sponsor:  PHYSICS SOCIETY OF IRAN
Date:  2005Volume -
 
 
Abstract: 

IN THIS PAPER, WE HAVE INVESTIGATED THE CONTACT RESISTIVITY OF THE NI/CU AND TI/PD/AG STRUCTURES. THE RESULTS OF THESE ANALYZES AND MEASUREMENTS SHOW THAT FOR A SPECIFIC SILICON DOPING VALUE, THE NI/CU IS THE MOST SUITABLE AND COST EFFECTIVE STRUCTURE DUE TO ITS LOWER SCHOTTKY BARRIER HEIGHT (WHICH IS NOT MEASURABLE BY C-V METHOD), AND THEREFORE ITS BETTER OHMIC CONTACT. ACCORDING TO THE OBTAINED RESULTS, THE RESISTIVITY REACHES TO 4.8X10-6 AFTER ANNEALING AT 320OC FOR NI/CU STRUCTURE AND 8X10-6 AFTER ANNEALING AT 480OC FOR TI/PD/AG STRUCTURE.

 
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