Paper Information

Title: 

THE POST-ANNEALING EFFECTS ON THE FORMATION OF B- SIC INTO THE SILICONE SUBSTRATES BOMBARDED WITH METHANE; USING FTIR SPECTROSCOPY

Type: PAPER
Author(s): DIBAJI HASSAN,MOJTAHEDZADEH MAJID,SALEH KOOTAHI MOHSEN,NOVINROOZ ABDOLJAVAD,AFZALZADEH REZA,NOROOZIAN SHAHAB
 
 
 
Name of Seminar: IRAN PHYSICS CONFERENCE
Type of Seminar:  CONFERENCE
Sponsor:  PHYSICS SOCIETY OF IRAN
Date:  2005Volume -
 
 
Abstract: 

METHANE IONS WERE IMPLANTED INTO SILICON SINGLE CRYSTAL (111) WITH A FIXED ENERGY OF 90 KEV AT DIFFERENT DOSES 4´1017 - 3.2´1018 IONS / CM2. DURING THE IMPLANTATION, THE SUBSTRATES TEMPERATURE WAS KEPT CONSTANT AT 5700C. FTIR SPECTROSCOPY CONFIRMS THE FORMATION OF SI-C BOND IMMEDIATELY AFTER THE IMPLANTATION. FTIR RESULTS SHOW THAT AFTER POST-ANNEALING OF THE IMPLANTED SAMPLES AT 980OC, A PHASE TRANSFORMATION FROM AMORPHOUS HYDROGENATED SILICON CARBIDE (A-SIC: H) TO B -SIC IS OCCURRED. THE CRYSTALLINITY DEGREE OF B -SIC DEPENDS ON THE METHANE DOSES AS CONFIRMED BY FTIR MEASUREMENTS. THE THICKNESS OF B -SIC LAYERS WAS CALCULATED FROM FTIR.

 
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