Paper Information

Title: 

THE INFLUENCE OF IMPURITIES ON TMR AND I-V CHARACTERISTICS IN NANOHETEROSTRUCTURES

Type: PAPER
Author(s): KANJOURI F.*
 
 *PHYSICS DEPARTMENT, YAZD UNIVERSITY, YAZD
 
Name of Seminar: IRAN PHYSICS CONFERENCE
Type of Seminar:  CONFERENCE
Sponsor:  PHYSICS SOCIETY OF IRAN
Date:  2005Volume -
 
 
Abstract: 

THEORETICALLY INVESTIGATED THE INFLUENCE OF IMPURITIES EMBEDDED INTO THE INSULATING BARRIER (I) SEPARATING THE TWO FERROMAGNETIC ELECTRODES (F) ON THE I-V CHARACTERISTICS AND TUNNEL MAGNETO RESISTANCE (TMR). IT IS SHOWN THAT THE CURRENT AND TMR ARE STRONGLY ENHANCED IN THE VICINITY OF IMPURITY. IF THE POSITION OF IMPURITY INSIDE THE BARRIER IS ASYMMETRIC, THE I-V CHARACTERISTIC EXHIBITS A QUASIDIODE BEHAVIOR.

 
Keyword(s): 
 
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