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Paper Information

Title: 

DETERMINATION OF TI/SI INTERFACE CHARGE DENSITY GROWN BY PLASMA DEPOSITION

Type: PAPER
Author(s): SADEGHZADEH MOHAMAD ALI,GHRIB SHAHI LEYLA,ABOLHASANI ELHAM
 
 
 
Name of Seminar: NATIONAL VACUUM CONFERENCE IRAN
Type of Seminar:  CONFERENCE
Sponsor:  Industrial sharif University
Date:  2008Volume 3
 
 
Abstract: 

IN THIS PAPER A TI/SI METAL-SEMICONDUCTOR JUNCTION AS THE GATE, WAS FORMED BY PLASMA DEPOSITION ON THE CLEAN SI SURFACE OF P-SI/SIGE/SI INVERTED MODULATION DOPED STRUCTURES. THERE IS A TWO DIMENSIONAL HOLE GAS (2DHG) IN THE ALLOY LAYER OF THIS STRUCTURE AND ITS AREAL SHEET DENSITY NS CAN BE CONTROLLED BY APPLICATION A VOLTAGE TO THE GATE. THE TI/SI INTERFACE CHARGE DENSITY HAS BEEN DETERMINED BY THEORETICAL SIMULATION OF EXPERIMENTAL RESULTS OF NS – VG. THE RESULTS INDICATES THAT AS THE SI CAP THICKNESS INCREASES FROM 180 UP TO 480NM, THE TI/SI INTERFACE CHARGE DENSITY VARIES FROM 4.6 DOWN TO 1.95×1015 CM-2 RESPECTIVELY.

 
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