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Paper Information

Title: 

EFFECT OF CHAMBER PRESSURE ON THE GROWTH OF NANOPARTICLES COPPERCARBON COMPOSITE FILMS PREPARED BY SIMULTANEOUS USE OF RFPECVD AND RF-SPUTTERING DEPOSITION TECHNIQUE

Type: PAPER
Author(s): GHODS ELAHI TAYEBEH,VESAGHI MOHAMAD ALI,SHAFIEKHANI AZIZOLLAH,OLIAIY PARVIN,LAMEII RASHTI MOHAMAD
 
 
 
Name of Seminar: NATIONAL VACUUM CONFERENCE IRAN
Type of Seminar:  CONFERENCE
Sponsor:  Industrial sharif University
Date:  2008Volume 3
 
 
Abstract: 

NANOPARTICLE COPPER/CARBON COMPOSITE FILMS WERE PREPARED BY CO-DEPOSITION OF RF-SPUTTERING AND RF-PECVD METHOD FROM ACETYLENE GAS AND COPPER TARGET. WE INVESTIGATE DEPOSITION PROCESS IN THE REGION WHERE BY CHANGING PRESSURE, THE PROCESS CONVERTS TO PHYSICAL SPUTTERING MODE IN CONSTANT POWER REGIME AND AT A CRITICAL PRESSURE BETWEEN 1.5 TO 3 PA. THE ESTIMATED VALUE OF MEAN ION ENERGY AT THIS CRITICAL POINT OF PRESSURE IS CLOSE TO THRESHOLD ENERGY OF PHYSICAL SPUTTERING OF COPPER ATOMS BY ACETYLENE IONS. BY UTILIZING THIS PROPERTY AND BY SETTING INITIAL PRESSURE FROM 1.3 TO 6.6 PA, NANOPARTICLES COPPER/CARBON COMPOSITE FILMS WERE GROWN WITH DIFFERENT COPPER CONTENT. THE COPPER CONTENT OF OUR FILMS WAS OBTAINED BY RUTHERFORD BACK SCATTERING (RBS) AND X-RAY PHOTOELECTRON SPECTROSCOPY (XPS). ATOMIC FORCE MICROSCOPY (AFM) IMAGE AND X-RAY DIFFRACTION (XRD) INDICATED THAT COPPER NANOPARTICLES WERE FORMED IN OUR FILMS.

 
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