Paper Information

Title: 

CHARACTERIZATION OF INSB INTERFACE WITH OXIDE FILMS GROWN BY PECVD METHOD AND QUALITY CARRIED OUT BY C-V MEASUREMENT

Type: PAPER
Author(s): SHIRIN ZADEH HAJI,BORNAYE ZENOOZI SORAYA,SAREMI NIA GHODRATOLLAH,SIMCHI HAMID RAZA
 
 
 
Name of Seminar: NATIONAL VACUUM CONFERENCE IRAN
Type of Seminar:  CONFERENCE
Sponsor:  Industrial sharif University
Date:  2008Volume 3
 
 
Abstract: 

SIO2 AND SI3N4 LAYERS ARE FORMED ON INSB WAFER BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) TECHNIQUE, DUE TO THE SIGNIFICANT OF SURFACE LEAKAGE CURRENT IS LIMITING IN LONG WAVELENGTH INFRARED DETECTORS, WHICH GIVES RISE TO MIS (METAL INSULATOR SEMICONDUCTOR) CAPACITOR FORMATION. IN THIS DOCUMENT, ALL OF DEPOSITION PROCEDURES, SEMICONDUCTOR SURFACE PASSIVATION NECESSITY, QUALITY OF DEPOSITED LAYER AND IDENTIFYING THE TYPE OF SUBSTRATE WILL BE DISCUSSED.

 
Keyword(s): ELECTRONIC STRUCTURE, ELECTRICAL PROPERTIES OF SURFACE, SIO2, MIS STRUCTURE, PECVD SYSTEM
 
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