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Paper Information

Title: 

CHARACTERIZATION OF SILICON-BORON SLAB DOPING IN THE SI/SI-B/SI STRUCTURE GROWN BY MOLECULAR BEAM EPITAXY

Type: PAPER
Author(s): SADEGHZADEH MOHAMMAD ALI,ABOLHASANI ELHAM
 
 
 
Name of Seminar: NATIONAL VACUUM CONFERENCE IRAN
Type of Seminar:  CONFERENCE
Sponsor:  Industrial sharif University
Date:  2008Volume 3
 
 
Abstract: 

ELECTRICAL CHARACTERIZATION OF SILICON-BORON SLAB DOPING IN THE SI/SI-B/SI STRUCTURE GROWN BY MOLECULAR BEAM EPITAXY (MBE) HAS BEEN CONSIDERED IN THIS PAPER. AFTER GROWTH, THE TRANSVERSAL HAL VOLTAGE HAS BEEN MEASURED IN THE 60-300K TEMPERATURE RANGE AND TEMPERATURE DEPENDENCE OF HALL COEFFICIENT HAS BEEN DETERMINED. THE VOLUME CONCENTRATION AND BINDING ENERGY OF DO PANT, HALL FACTOR AND LIFTING COEFFICIENT OF FERMI LEVEL HAVE BEEN DETERMINED BY THEORETICAL SIMULATION OF HOLE SHEET DENSITY VERSUS TEMPERATURE.

 
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