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Paper Information

Journal:   INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND)   summer 2019 , Volume 10 , Number 3; Page(s) 281 To 290.
 
Paper: 

High speed Radix-4 Booth scheme in CNTFET technology for high performance parallel multipliers

 
 
Author(s):  RAHNAMAEI ALI, ZARE FATIN GHOLAMREZA*, ESKANDARIAN ABDOLLAH
 
* Department of Electrical and Computer Engineering, University of Mohaghegh Ardabili, Ardabil, Iran
 
Abstract: 
novel and robust scheme for radix-4 Booth scheme implemented in Carbon Nanotube Field-Effect Transistor (CNTFET) technology has been presented in this paper. The main advantage of the proposed scheme is its improved speed perfor-mance compared with previous designs. With the help of modifications applied to the encoder section using Pass Transistor Logic (PTL), the corresponding capacitances of middle stages have been reduced considerably. As a result, total transistor count along with power consumption has been decreased illustrating the other advantages of the designed structure. For evaluation of correct functionality, simulations using CNTFET 32nm standard process have been performed for the de-signed scheme which depict the latency of 195ps for critical path. Meanwhile, comparison with previous works using the Power Delay Product (PDP) criteria demonstrates the superiority of the proposed structure suggesting that our circuitry can be widely utilized for high speed parallel multiplier design.
 
Keyword(s): CNTFET,High Speed,Low Power,Parallel Multiplier,Radix-4 Booth Scheme
 
 
References: 
 
Citations: 
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APA: Copy

RAHNAMAEI, A., & ZARE FATIN, G., & ESKANDARIAN, A. (2019). High speed Radix-4 Booth scheme in CNTFET technology for high performance parallel multipliers. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), 10(3), 281-290. https://www.sid.ir/en/journal/ViewPaper.aspx?id=668755



Vancouver: Copy

RAHNAMAEI ALI, ZARE FATIN GHOLAMREZA, ESKANDARIAN ABDOLLAH. High speed Radix-4 Booth scheme in CNTFET technology for high performance parallel multipliers. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND). 2019 [cited 2021August04];10(3):281-290. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=668755



IEEE: Copy

RAHNAMAEI, A., ZARE FATIN, G., ESKANDARIAN, A., 2019. High speed Radix-4 Booth scheme in CNTFET technology for high performance parallel multipliers. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), [online] 10(3), pp.281-290. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=668755.



 
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