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Paper Information

Journal:   JOURNAL OF OPTOELECTRONICAL NANOSTRUCTURES   WINTER 2019 , Volume 4 , Number 1; Page(s) 51 To 65.

Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET)

Author(s):  Pourchitsaz Kazem, SHAYESTEH MOHAMMAD REZA*
* Department of Electrical Engineering, Yazd Azad University, Yazd, Iran
We present the design and simulation of a single-walled carbon nanotube (SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, the self-heating effect modeling of the CNT MOSFET structure is performed and compared with conventional MOSFET structure having same channel length. The numerical results are presented to show the self-heating effect on the I– V characteristics of the CNT MOSFET and conventional MOSFET structures. Results from numerical simulation show that the maximum temperature rise and the performance degradation of the CNT MOSFET are quite lower than that of the conventional MOSFET counterpart. These advantages are contributed by the good electrical and thermal properties of the SWCNTs. Therefore, SWCNT materials have a high capability for the development of active devices with low power dissipation and good reliability at high operating temperature.
Keyword(s): Field Effect Transistor (FET),Single-Walled Carbon Nanotube (SWCNT),Self-Heating Effect,Transistor Characteristic,Threshold Voltage
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