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Paper Information

Journal:   JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL)   2017 , Volume 11 , Number 4; Page(s) 291 To 299.
 
Paper: 

RAPID GROWTH OF ZINC OXIDE NANOBARS IN PRESENCE OF ELECTRIC FIELD BY PHYSICAL VAPOR DEPOSITION

 
 
Author(s):  JOUYA MEHRABAN, TAROMIAN FAHIME*, SIAMI SIMIN
 
* DEPARTMENT OF SOLID STATE PHYSICS, FACULTY OF PHYSICS, K. N TOOSI UNIVERSITY OF TECHNOLOGY, TEHRAN, IRAN
 
Abstract: 

In this contribution, electric field has some effects to increase growth for specific time duration on zinc oxide (ZnO) nanobars. First, the zinc (Zn) thin film has been prepared by 235, 000 V/m electric field assisted physical vapor deposition (PVD) at vacuum of 1.339 10-5 mbar. Second, strong electric field of 134, 000 V/m has been used in ambient for growing ZnO nanobars in term of the time include 2.5 and 10 h. The performances of the ZnO nanostructure in absence and presence of electric field have been determined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results of XRD analysis showed that ZnO has a hexagonal bars structure and a strongly preferred (101) orientation which is strongest than without applying electric field. SEM analysis revealed that physical vapored ZnO thin film in presence of electric field are densely packed with uniform morphological, thinner and denser in distribution. Electric field effect for ZnO growth in 2.5 h is better than it in the 2.5 h without electric field but by passing the time the media influence has good power almost as same as electric field. Through this electric field in PVD, the compact and uniform Zn film has been achieved which is less diameter than ordinary PVD method. Finally, we carry out a series of experiments to grow differentorientation ZnO nanobars with less than 100 nm in diameter, which are the time saving process in base of PVD ever reported. Therefore, the significant conclusion in usage electric field is reducing time of growth.

 
Keyword(s): ZN THIN FILM, PHYSICAL VAPOR DEPOSITION (PVD), ZNO NANOSTRUCTURE, STRONG ELECTRIC FIELD
 
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