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Paper Information

Journal:   IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING   JUNE 2016 , Volume 12 , Number 2; Page(s) 147 To 153.
 
Paper: 

GRAPHENE NANO-RIBBON FIELD EFFECT TRANSISTOR UNDER DIFFERENT AMBIENT TEMPERATURES

 
 
Author(s):  AKBARI ESHKALAK M.*
 
* DEPARTMENT OF ELECTRICAL ENGINEERING, ROUDSAR AND AMLASH BRANCH, ISLAMIC AZAD UNIVERSITY, ROUDSAR, IRAN
 
Abstract: 

This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product compared with low-temperature GNRFET (LT-GNRFET) and medium-temperature GNRFET (MTGNRFET).
Besides, the LT-GNRFET demonstrates the lowest off-state current and the highest ratios of Ion/Ioff, average velocity and mobile charge. In addition, the LT-GNRFET has the highest gate and quantum capacitances among three aforementioned GNRFETs.

 
Keyword(s): GNRFET, AMBIENT TEMPERATURE, NON-EQUILIBRIUM GREEN’S FUNCTION (NEGF), HIGH FREQUENCY, TWO-DIMENSIONAL FET MODEL
 
 
References: 
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Citations: 
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+ Click to Cite.
APA: Copy

AKBARI ESHKALAK, M. (2016). GRAPHENE NANO-RIBBON FIELD EFFECT TRANSISTOR UNDER DIFFERENT AMBIENT TEMPERATURES. IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING, 12(2), 147-153. https://www.sid.ir/en/journal/ViewPaper.aspx?id=571854



Vancouver: Copy

AKBARI ESHKALAK M.. GRAPHENE NANO-RIBBON FIELD EFFECT TRANSISTOR UNDER DIFFERENT AMBIENT TEMPERATURES. IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING. 2016 [cited 2021July29];12(2):147-153. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=571854



IEEE: Copy

AKBARI ESHKALAK, M., 2016. GRAPHENE NANO-RIBBON FIELD EFFECT TRANSISTOR UNDER DIFFERENT AMBIENT TEMPERATURES. IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING, [online] 12(2), pp.147-153. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=571854.



 
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