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Paper Information

Journal:   JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY   2015 , Volume - , Number 70; Page(s) 9 To 18.
 
Paper: 

THE EFFECT OF POTENTIAL BARRIER ON STOPPING POWER ALONG AXIS- CHANNEL OF SILICON FOR PROTONS

 
 
Author(s):  SHAFIEI S., LAMEHI RACHTI M.*
 
* NUCLEAR SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE, AEOI, TEHRAN – IRAN
 
Abstract: 

In this paper, the effect of the potential barrier and open area of Silicon along the crystallographic direction <100> and <110> on the channeling stopping power and the channeling half- distance for protons are investigated. The channeling stopping power and the channeling half- distance for protons are measured by simulation of the channeling spectra in the energy range of Ep=1800-2200keV. It is assumed that the dechanneling process behaves exponentially. It showed that the channeling stopping power for protons decreases when the potential barrier and open area of channel increase. Furthermore, the channeling half- distance increases by increasing the open area of the channel.

 
Keyword(s): POTENTIAL BARRIER, STOPPING POWER, AXIAL CHANNEL, CHANNELING HALF- DISTANCE, SILICON
 
 
References: 
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Citations: 
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+ Click to Cite.
APA: Copy

SHAFIEI, S., & LAMEHI RACHTI, M. (2015). THE EFFECT OF POTENTIAL BARRIER ON STOPPING POWER ALONG AXIS- CHANNEL OF SILICON FOR PROTONS. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, -(70), 9-18. https://www.sid.ir/en/journal/ViewPaper.aspx?id=508438



Vancouver: Copy

SHAFIEI S., LAMEHI RACHTI M.. THE EFFECT OF POTENTIAL BARRIER ON STOPPING POWER ALONG AXIS- CHANNEL OF SILICON FOR PROTONS. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY. 2015 [cited 2021July26];-(70):9-18. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=508438



IEEE: Copy

SHAFIEI, S., LAMEHI RACHTI, M., 2015. THE EFFECT OF POTENTIAL BARRIER ON STOPPING POWER ALONG AXIS- CHANNEL OF SILICON FOR PROTONS. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, [online] -(70), pp.9-18. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=508438.



 
 
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