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Paper Information

Journal:   JOURNAL OF MODELING IN ENGINEERING   WINTER 2011 , Volume 8 , Number 23; Page(s) 19 To 24.
 
Paper: 

DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS

 
 
Author(s):  OROUJI A.A.*, HEYDARI S.
 
* ELECTRICAL ENGINEERING DEPARTMENT, SEMNAN UNIVERSITY, SEMNAN
 
Abstract: 

In this paper, a new silicon-on-insulator (SOI) device structure is proposed to reduce self-heating effects. Using Si3N4 material is main idea in the structure that has high thermal conductivity respect to silicon dioxide. The device has been verified in two-dimensional device simulation. The results show that the structure provides a new path to reduce the temperature of the channel of SOI Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and decreases the temperature in the channel.

 
Keyword(s): FIELD EFFECT TRANSISTOR, SILICON ON INSULATOR, SELF-HEATING EFFECT
 
 
References: 
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Citations: 
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+ Click to Cite.
APA: Copy

OROUJI, A., & HEYDARI, S. (2011). DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS. JOURNAL OF MODELING IN ENGINEERING, 8(23), 19-24. https://www.sid.ir/en/journal/ViewPaper.aspx?id=277416



Vancouver: Copy

OROUJI A.A., HEYDARI S.. DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS. JOURNAL OF MODELING IN ENGINEERING. 2011 [cited 2021July25];8(23):19-24. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=277416



IEEE: Copy

OROUJI, A., HEYDARI, S., 2011. DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS. JOURNAL OF MODELING IN ENGINEERING, [online] 8(23), pp.19-24. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=277416.



 
 
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