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Paper Information

Journal:   INTERNATIONAL JOURNAL OF INDUSTRIAL ENGINEERING AND PRODUCTION MANAGEMENT (IJIE) (INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE) (PERSIAN)   2008 , Volume 19 , Number 10-1 (SUPPLEMENT ELECTRICAL, INDUSTRIES AND CIVIL ENGINEERING); Page(s) 11 To 20.
 
Paper: 

A COMPREHENSIVE STUDY OF SHORT CHANNEL EFFECTS IMPROVEMENT TECHNIQUES IN SOIMOSFET AND A NOVEL APPROACH

 
 
Author(s):  OROUJI ALI A.*
 
* DEPARTMENT OF ELECTRICAL ENGINEERING, SEMNAN UNIVERSITY, SEMNAN, IRAN
 
Abstract: 

This paper critically examines the Short Channel Effects (SCEs) improvement techniques for improving the performance of SOI-MOSFETs. Also for first time, a new device structure called the Shielded Channel Multiple-Gate SOI-MOSFET (SC-MG) is introduced and designed. Using two-dimensional and two-carrier device simulation, it is demonstrated that the SC-MG exhibits a significantly reduced the electric field due to drain voltage. Also, variation of potential barrier up to 1.5 V is near to zero. This structure dose not has any problems in fabrication methods and need extra power supply in comprehensive with corresponding structures.

 
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Click to Cite.
APA: Copy

OROUJI, A. (2008). A COMPREHENSIVE STUDY OF SHORT CHANNEL EFFECTS IMPROVEMENT TECHNIQUES IN SOIMOSFET AND A NOVEL APPROACH. INTERNATIONAL JOURNAL OF INDUSTRIAL ENGINEERING AND PRODUCTION MANAGEMENT (IJIE) (INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE) (PERSIAN), 19(10-1 (SUPPLEMENT ELECTRICAL, INDUSTRIES AND CIVIL ENGINEERING)), 11-20. https://www.sid.ir/en/journal/ViewPaper.aspx?id=274636



Vancouver: Copy

OROUJI ALI A.. A COMPREHENSIVE STUDY OF SHORT CHANNEL EFFECTS IMPROVEMENT TECHNIQUES IN SOIMOSFET AND A NOVEL APPROACH. INTERNATIONAL JOURNAL OF INDUSTRIAL ENGINEERING AND PRODUCTION MANAGEMENT (IJIE) (INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE) (PERSIAN). 2008 [cited 2021May11];19(10-1 (SUPPLEMENT ELECTRICAL, INDUSTRIES AND CIVIL ENGINEERING)):11-20. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=274636



IEEE: Copy

OROUJI, A., 2008. A COMPREHENSIVE STUDY OF SHORT CHANNEL EFFECTS IMPROVEMENT TECHNIQUES IN SOIMOSFET AND A NOVEL APPROACH. INTERNATIONAL JOURNAL OF INDUSTRIAL ENGINEERING AND PRODUCTION MANAGEMENT (IJIE) (INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE) (PERSIAN), [online] 19(10-1 (SUPPLEMENT ELECTRICAL, INDUSTRIES AND CIVIL ENGINEERING)), pp.11-20. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=274636.



 
 
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