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Paper Information

Journal:   IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING   2004 , Volume 28 , Number B2; Page(s) 265 To 268.
 
Paper: 

A NOVEL APPROACH TO THE PLATINUM ELECTRODE ETCHING FOR DRAM APPLICATIONS

 
 
Author(s):  KIM H.W.*, KANG C.J.
 
* lnha University, Incheon, Republic of Korea
 
Abstract: 
We have proposed the novel etching technology of Pt using a hard mask in reactive ion etching plasmas. By the insertion of a Ti mask layer and increasing the wafer temperature in O2 plasma by a dual frequency reactive ion etcher (RIE), we have obtained a higher Pt etching slope, This result not only enlightens the next generation of DRAM and FRAM technology, but also develops the basic technology ofpatterning inert materials.
 
Keyword(s): TI MASK, ETCHING, SCANNING ELECTRON MICROSCOPY, TRANSMISSION ELECTRON MICROSCOPY
 
 
References: 
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Cite:
APA: Copy

KIM, H., & KANG, C. (2004). A NOVEL APPROACH TO THE PLATINUM ELECTRODE ETCHING FOR DRAM APPLICATIONS. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING, 28(B2), 265-268. https://www.sid.ir/en/journal/ViewPaper.aspx?id=13279



Vancouver: Copy

KIM H.W., KANG C.J.. A NOVEL APPROACH TO THE PLATINUM ELECTRODE ETCHING FOR DRAM APPLICATIONS. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING. 2004 [cited 2021April18];28(B2):265-268. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=13279



IEEE: Copy

KIM, H., KANG, C., 2004. A NOVEL APPROACH TO THE PLATINUM ELECTRODE ETCHING FOR DRAM APPLICATIONS. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING, [online] 28(B2), pp.265-268. Available at: <https://www.sid.ir/en/journal/ViewPaper.aspx?id=13279>.



 
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