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Paper Information

Journal:   NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN)   FALL 2007 , Volume 5 , Number 3; Page(s) 173 To 177.
 
Paper: 

INVESTIGATION OF NEW STRUCTURES FOR CARBON NANOTUBE FETS

 
 
Author(s):  HOSSEINI S.E.*, FAEZ R.
 
* DEPT. OF ELECTRICAL AND COMPUTER ENG., TARBIAT MOALLEM UNIVERSITY OF SABZEVAR, SABZEVAR, I.R. IRAN
 
Abstract: 

A carbon nanotube field effect transistor (CNTFET) with Schottky contacts for the drain and the source has been investigated. It is shown that the saturation region of the transistor output characteristics is small. This limits the application of the transistor. To improve the saturation range in the output characteristics, new structures are proposed, and the simulation results are compared. The proposed structures have supperior output characteristics.

 
Keyword(s): CARBON NANOTUBE, FET, SIMULATION, OUTPUT CHARACTERISTICS, CNT
 
 
References: 
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Citations: 
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+ Click to Cite.
APA: Copy

HOSSEINI, S., & FAEZ, R. (2007). INVESTIGATION OF NEW STRUCTURES FOR CARBON NANOTUBE FETS. NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN), 5(3), 173-177. https://www.sid.ir/en/journal/ViewPaper.aspx?id=102795



Vancouver: Copy

HOSSEINI S.E., FAEZ R.. INVESTIGATION OF NEW STRUCTURES FOR CARBON NANOTUBE FETS. NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN). 2007 [cited 2021June18];5(3):173-177. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=102795



IEEE: Copy

HOSSEINI, S., FAEZ, R., 2007. INVESTIGATION OF NEW STRUCTURES FOR CARBON NANOTUBE FETS. NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN), [online] 5(3), pp.173-177. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=102795.



 
 
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