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Paper Information

Journal:   INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING)   SUMMER 2007 , Volume 23 , Number 38; Page(s) 109 To 113.
 
Paper: 

APPLICATION OF QUANTUM CORRECTED MONTE CARLO METHOD FOR A RESONANT TUNNELING DIODE

 
 
Author(s):  POUR FATH M., FAEZ R.
 
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Abstract: 

The boltzmann Transport Equation (BTE) is the basic differential equation used for simulation of semiconductor devices. BTE is a semiclassical equation that doesn't include quantum effects. Using the Wigner transport equation, a correction to BTE can be obtained that includes quantum effects. In this paper, the Monte Carlo method was used for solving quantum corrected BTE for a Resonant Tunneling Diode (RTD). As expected, a negative resistance in the current- voltage curve was observed. To obtain a deep insight into such behavior, the current-voltage curve was divided into three regions. In each region the effects of electrostatic potential, effective potential and carrier density variations on the current- voltage curve were studied.

 
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APA: Copy

POUR FATH, M., & FAEZ, R. (2007). APPLICATION OF QUANTUM CORRECTED MONTE CARLO METHOD FOR A RESONANT TUNNELING DIODE. INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING), 23(38), 109-113. https://www.sid.ir/en/journal/ViewPaper.aspx?id=101760



Vancouver: Copy

POUR FATH M., FAEZ R.. APPLICATION OF QUANTUM CORRECTED MONTE CARLO METHOD FOR A RESONANT TUNNELING DIODE. INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING). 2007 [cited 2021June16];23(38):109-113. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=101760



IEEE: Copy

POUR FATH, M., FAEZ, R., 2007. APPLICATION OF QUANTUM CORRECTED MONTE CARLO METHOD FOR A RESONANT TUNNELING DIODE. INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING), [online] 23(38), pp.109-113. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=101760.



 
 
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