Paper Information

Journal:   INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING)   SUMMER 2007 , Volume 23 , Number 38; Page(s) 3 To 9.
 
Paper: 

SIMULATION OF 2D ELCTRON GAS IN ALGAN/GAN HEMT AND INVESTIGATION OF ITS BREAKDOWN VOLTAGE

 
 
Author(s):  FAEZ R.*
 
* DEPT. OF ELECTRICAL ENGINEERING, SHARIF UNIVERSITY OF TECHNOLOGY
 
Abstract: 

The AlGaN/GaN heterostructure is used in power devices. Therefore, having large current density and breakdown voltage is important. The effect of different parameters on 2D electron gas is investigated and the best cases are shown. Also it is shown that, in some cases, there is an accumulation of holes on the top surface of AIGaN. But, because of the existence of traps, it is not seen experimentally. Then, the effect of traps on 2D electron gas is investigated. Finally, methods of increasing breakdown voltage are discussed, one case is simulated and it is shown how breakdown voltage increases.

 
Keyword(s): 
 
References: 
  • ندارد
 
  Persian Abstract Yearly Visit 32
 
Latest on Blog
Enter SID Blog