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Paper Information

Journal:   IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING   DECEMBER 2007 , Volume 31 , Number B6; Page(s) 641 To 650.
 
Paper: 

A HIGH SPEED SIGE VCO BASED ON SELF INJECTION LOCKING SCHEME

 
 
Author(s):  SANIEI N.*, JAHANSHAHI H.
 
* FACULTY OF ELECTRICAL AND COMPUTER ENGINEERING, SHAHID BEHESHTI UNIVERSITY (SBU), EVIN, TEHRAN, I.R. OF IRAN
 
Abstract: 

This paper discusses the design and implementation of an inductorless differential VCO with a maximum oscillation frequency of 20 GHz, in a 47 GHz SiGe process technology. The VCO is based on a full-wave rectification frequency-doubling technique, applied to a half rate differential single-stage feedback oscillator. It also benefits from a new circuit phenomenon named hereinafter Self Injection Locking (SIL). The implemented VCO has an area of 0.5 mm2 and features a remarkably high ratio of VCO frequency to process fT. Based on measurement results, the VCO consumes a DC power of less than 165 mW and exhibits a phase noise of -96 dBc/Hz at 1 MHz offset.

 
Keyword(s): SILICON GERMANIUM (SIGE), HETEROJUNCTION BIPOLAR TRANSISTOR (HBT), HIGH-SPEED CIRCUIT, VOLTAGE-CONTROLLED OSCILLATOR (VCO), PHASE NOISE, DIFFERENTIAL STAGE, INJECTION LOCKING OSCILLATOR
 
References: 
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