Paper Information

Journal:   IRANIAN JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING (IJECE)   SUMMER-FALL 2007 , Volume 6 , Number 2; Page(s) 159 To 162.
 
Paper:  THE EFFECT OF NITROGEN ON THE ENERGY GAP OF A STRUCTURE WITH STRAINED QUANTUM WELL CONTAINING GAINNAS/GAAS
 
Author(s):  AISSAT A., NACER S., EL BEY M., GUESSOUM A., FERDJANI K., BERKANI D., VILCOT J.P.
 
* 
 
Abstract: 

This paper studies the effect of nitrogen on a laser forming structure with strained quantum well containing GaInAs. In particular, it treats the question of evaluating the influence of nitrogen on the conduction band by using the anticrossing band model. The incorporation of nitrogen decreases the energy of the band gap and consequently increases the emission wavelength. The reduction in energy is due to the interaction between the conduction band energy and the nitrogen level, and the more the nitrogen concentration grows the more the band gap energy decreases. On the other hand the wavelength of emission also increases, thus the advantage of the incorporation of nitrogen in the proposed structure is to vary the emission wavelength in order to reach 1.3 mm. One can also exploit the effect of gallium composition and the width quantum well on the emission wavelength.

 
Keyword(s): STRAINED QUANTUM WELL LASERS, SEMICONDUCTOR LASERS, OPTOELECTRONIC
 
References: 
  • ندارد
 
  Yearly Visit 164
 
Latest on Blog
Enter SID Blog