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Paper Information

Journal:   NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ   Spring 2020 , Volume 18 , Number 1 ; Page(s) 67 To 72.
 
Paper: 

Improvement In Electrical Characteristics Of Silicon On Insulator Junctionless Field Effect Transistor (Soi-Jlfet) Using The Auxiliary Gate

 
 
Author(s):  Vadizadeh M., Ghoreishi Seyed Saleh, Fallahnejad Mohammad
 
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Abstract: 
Silicon on insulator junctionless field effect transistor (SOI-JLFET) includes a single type doping at the same level in the source, channel, and drain regions. Therefore, its fabrication process is easier than inversion mode SOI-FET. However, SOI-JLFET suffers from high subthreshold slope (SS) as well as high leakage current. As a result, the SOI-JLFET device has limitation for high speed and low power applications. For the first time in this study, use of the auxiliary gate in the drain region of the SOI-JLFET has been proposed to improve the both SS and leakage current parameters. The proposed structure is called "SOI-JLFET Aug". The optimal selection for the auxiliary gate work function and its length, has improved the both SS and ION/IOFF ratio parameters, as compared to Regular SOI-JLFET. Simulation results show that, SOI-JLFET Aug with 20nm channel length exhibits the SS~71mV/dec and ION/IOFF~1013. SS and ON-state to OFF-state current (ION/IOFF) ratio of SOI-JLFET Aug are improved by 14% and three orders of magnitudes, respectively, as compared to the Regular SOI-JLFET. The SOI-JLEFT Aug could be good candidate for digital applications.
 
Keyword(s): Silicon on insulator junctionless FET,intrinsic gate delay,subthereshold slope,auxiliary gate,ON-state to OFF-state current ratio
 
 
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APA: Copy

VADIZADEH, M., & GHOREISHI, S., & fallahnejad, m. (2020). Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ, 18(1 ), 67-72. https://www.sid.ir/en/journal/ViewPaper.aspx?id=720719



Vancouver: Copy

VADIZADEH M., GHOREISHI SEYED SALEH, fallahnejad mohammad. Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ. 2020 [cited 2022January27];18(1 ):67-72. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=720719



IEEE: Copy

VADIZADEH, M., GHOREISHI, S., fallahnejad, m., 2020. Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ, [online] 18(1 ), pp.67-72. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=720719.



 
 
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