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Paper Information

Journal:   NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ   SUMMER 2017 , Volume 15 , Number 2; Page(s) 137 To 142.
 
Paper: 

A NOVEL SOURCE/DRAIN SIDE DOUBLE RECESSED GATE 4H-SIC MESFET WITH N-BURIED LAYER IN THE CHANNEL

 
 
Author(s):  RAZAVI S.M.*, ZAHIRI S.H.
 
* DEPT. OF ELEC. ENG., NEYSHABUR UNIVERSITY, NEYSHABUR, I.R. IRAN
 
Abstract: 

A new structure named as source/drain sides-double recessed gate with N-buried layer in the channel (SDS-DRG) silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is presented in this study. Important parameters such as short channel effect, maximum DC trans-conductance, drain current and breakdown voltage of the proposed structure are simulated and compared with those of the source side-double recessed gate (SS-DRG) and drain side-double recessed gate (DS-DRG) 4H-SiC MESFETs. Our simulation results reveal that reducing the channel thickness under the gate at the SDS-DRG structure improves the maximum DC trans-conductance and reduces the short channel effects compared to SS-DRG and DS-DRG structures. Reducing the channel thickness under the gate at the drain side of the SDS-DRG structure is used to enhance the breakdown voltage in comparison with the SS-DRG structure. Also, N-buried layer with larger doping concentration in the SDS-DRG structure improves the saturated drain current compared to SS-DRG and DS-DRG structures.

 
Keyword(s): DOUBLE RECESSED GATE, N-BURIED LAYER, 4H-SIC MESFET, DC TRANS-CONDUCTANCE, SHORT CHANNEL EFFECTS, BREAKDOWN VOLTAGE
 
 
References: 
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Citations: 
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+ Click to Cite.
APA: Copy

RAZAVI, S., & ZAHIRI, S. (2017). A NOVEL SOURCE/DRAIN SIDE DOUBLE RECESSED GATE 4H-SIC MESFET WITH N-BURIED LAYER IN THE CHANNEL. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ, 15(2), 137-142. https://www.sid.ir/en/journal/ViewPaper.aspx?id=543918



Vancouver: Copy

RAZAVI S.M., ZAHIRI S.H.. A NOVEL SOURCE/DRAIN SIDE DOUBLE RECESSED GATE 4H-SIC MESFET WITH N-BURIED LAYER IN THE CHANNEL. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ. 2017 [cited 2021November27];15(2):137-142. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=543918



IEEE: Copy

RAZAVI, S., ZAHIRI, S., 2017. A NOVEL SOURCE/DRAIN SIDE DOUBLE RECESSED GATE 4H-SIC MESFET WITH N-BURIED LAYER IN THE CHANNEL. NASHRIYYAH -I MUHANDISI -I BARQ VA MUHANDISI -I KAMPYUTAR -I IRAN, A- MUHANDISI -I BARQ, [online] 15(2), pp.137-142. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=543918.



 
 
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