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Paper Information

Journal:   IRANIAN JOURNAL OF PHYSICS RESEARCH   Summer 2004 , Volume 4 , Number 2; Page(s) 103 To 108.
 
Paper: 

Fabrication And Study Of Carbon Nanotube By Plasma Enhanced Chemical Vapor Deposition (Pecvd)

 
 
Author(s):  Nasehnia F., Ganjipour B., Arzi E.A.*, Yousefnejad E., Mohajerzadeh S., Miri A.M.
 
* Department of Physics , University of Tehran
 
Abstract: 
We have successfully grown carbon nanotubes on cobalt coated silicon substrates at a temperature below 800°C using PECVD method. In this experiment ethylene and nitrogen gases are used as carbon source and diluting respectively. A thin film of cobalt layer is used as the catalyst and its role has been shown to be a basic factor in the growth of nanotube. Also, the temperature is studied as another important factor. SEM micrographs indicate the evolution of nanotubes at a plasma current of 8mA. At lower currents, however, growth is insignificant. The length of nanotubes depends on the time of deposition and increases with time. Also, the diameter of tubes is a function of the size of the catalyst islands.
 
Keyword(s): CARBON NANOTUBE, PECVD METHOD
 
 
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APA: Copy

NASEHNIA, F., & GANJIPOUR, B., & ARZI, E., & YOUSEFNEJAD, E., & MOHAJERZADEH, S., & MIRI, A. (2004). FABRICATION AND STUDY OF CARBON NANOTUBE BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD). IRANIAN JOURNAL OF PHYSICS RESEARCH, 4(2), 103-108. https://www.sid.ir/en/journal/ViewPaper.aspx?id=29905



Vancouver: Copy

NASEHNIA F., GANJIPOUR B., ARZI E.A., YOUSEFNEJAD E., MOHAJERZADEH S., MIRI A.M.. FABRICATION AND STUDY OF CARBON NANOTUBE BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD). IRANIAN JOURNAL OF PHYSICS RESEARCH. 2004 [cited 2022January24];4(2):103-108. Available from: https://www.sid.ir/en/journal/ViewPaper.aspx?id=29905



IEEE: Copy

NASEHNIA, F., GANJIPOUR, B., ARZI, E., YOUSEFNEJAD, E., MOHAJERZADEH, S., MIRI, A., 2004. FABRICATION AND STUDY OF CARBON NANOTUBE BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD). IRANIAN JOURNAL OF PHYSICS RESEARCH, [online] 4(2), pp.103-108. Available: https://www.sid.ir/en/journal/ViewPaper.aspx?id=29905.



 
 
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