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Paper Information

Journal:   INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE (ENGLISH)   2001 , Volume 12 , Number 1; Page(s) 47 To 57.
 
Paper: 

IN SITU FORMATION OF SILICON CARBIDE WHISKERS IN GRAPHITE-CONTAINING CERAMIC MATRIX COMPOSITES

 
 
Author(s):  MIRHABIBI A., AGHA BABAZADEH R., RAND B.
 
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Abstract: 

The objectives of this paper are to investigate the identification and mechanism of formation of whiskers formed during heat treatment of graphite containing ceramic-matrix composites. At the conditions of processing i.e., 1500°C under argon atmosphere and presence of silicon in the batch composition, formation of SiC whiskers have been shown. The results show that the mechanism of formation of SiC whiskers is VLS and it seems to be promising from hygienic industrial point of view.

 
Keyword(s): SILICON CARBIDE WHISKERS, IN SITU FORMATION, ALUMINA-GRAPHITE, WHISKERS, OXIDE-GRAPHITE
 
References: 
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