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Paper Information

Journal:   INTERNATIONAL JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (IJNN)   December 2005 , Volume 1 , Number 1; Page(s) 45 To 51.
 
Paper: 

REALIZATION OF VERTICALLY ALIGNED CARBON NANOTUBES ON SILICON SUBSTRATES

 
 
Author(s):  ABDI Y., KOMIJANI Y., MOHAJERZADEH S.*
 
* Thin Film laboratory, ECE Department, University of Tehran, Tehran, Iran
 
Abstract: 

Carbon nanotubes are vertically grown on silicon substrates using a plasma-enhanced-chemical vapor deposition (PECVD) method to achieve well-aligned structures. Carbon nano-tubes are grown from the Ni catalyst islands at a pressure of 3.5 torr with a mixture of C2H2 and H2 gases with 5 and 30sccm flow, respectively. The growth occurs at temperatures ranging from 500°C to 650°C. The outer diameter of the tubes ranges from 50 to 100 nm in different samples and the inner diameter ranges between 5 and 8 nm. The use of nickel patterning yields a growth on desired regions making the sample suitable for optical and communication purposes.

 

 

 

 
Keyword(s): CARBON NANO-TUBES, VERTICAL GROWTH, PATTERNED GROWTH, TIP GROWTH
 
References: 
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